g c e ds99174(10/04) features ? international standard package ? guaranteed short circuit soa capability ? low v ce(sat) - for low on-state conduction losses ? high current handling capability ? mos gate turn-on - drive simplicity ? fast fall time for switching speeds up to 20 khz applications ? ac motor speed control ? uninterruptible power supplies (ups) ? welding advantages ? high power density ixsh 20n60b2d1 high speed igbt short circuit soa capability symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c35a i c110 t c = 110 c20a i f(110) 21 a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t j = 125 c, r g = 82 ? i cm = 32 a (rbsoa) clamped inductive load @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 10 s (scsoa) r g = 82 ?, non repetitive p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c weight 2 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering for 10s 260 c symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 750 a, v ce = v ge 3.5 6.5 v i ces v ce = v ces 85 a v ge = 0 v t j = 125 c 0.6 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 16a, v ge = 15 v 2.5 v preliminary data sheet v ces = 600 v i c25 = 35 a v ce(sat) = 2.5 v g = gate c = collector e = emitter tab = collector to-247 (ixsh) d1 ? 2004 ixys all rights reserved
ixsh 20n60b2d1 reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 15a, v ge = 0 v t j =150 c 1.35 v 2.10 v i rm i f = 25a, v ge = 0 v, -di f /dt = 100 a/ s t j = 100 c 4.5 a t rr v r = 100 v t j = 100 c 110 ns t rr i f = 1 a; -di/dt = 100 a/ s; v r = 30 v 30 ns r thjc 1.6 k/w symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 16a; v ce = 10 v, note 1 3.5 7.0 s c ies 800 pf c oes v ce = 25 v, v ge = 0 v 110 pf c res f = 1 mhz 28 pf q g 33 nc q ge i c = 16a, v ge = 15 v, v ce = 0.5 v ces 12 nc q gc 12 nc t d(on) 30 ns t ri 30 ns t d(off) 116 ns t fi 126 ns e off 380 600 j t d(on) 30 ns t ri 30 ns e on 0.52 mj t d(off) 180 ns t fi 210 ns e off 970 j r thjc 0.66 k/w r thcs 0.25 k/w inductive load, t j = 25 c i c = 16a, v ge = 15 v v ce = 0.8 v ces , r g = 10 ? switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = 16 a, v ge = 15 v v ce = 0.8 v ces , r g = 10 ? switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g note 1: pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 to-247 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 0 2 4 6 8 101214161820 v c e - volts i c - amperes v ge = 17v 9v 11v 13v 15v fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 28 32 0.511.522.533.544.5 v ce - volts i c - amperes v ge = 17v 15v 7v 13v 9v 11v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 0.5 1 1.5 2 2.5 3 3.5 4 v c e - volts i c - amperes v ge = 17v 15v 13v 7v 9v 11v fig. 4. dependence of v ce( sat ) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalized i c = 16a i c = 8a v ge = 15v i c = 32a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 9 1011121314151617181920 v g e - volts v c e - volts t j = 25 o c i c = 32a 16a 8a fig. 6. input adm ittance 0 10 20 30 40 50 60 6 7 8 9 10 11 12 13 14 15 16 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c ixsh 20n60b2d1
ixsh 20n60b2d1 fig. 7. transconductance 0 1 2 3 4 5 6 7 8 9 0 102030405060 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of turn-off energy loss on r g 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 10 20 30 40 50 60 70 80 90 100 r g - ohms e o f f - miiiljoules i c = 8a t j = 125 o c v ge = 15v v ce = 400v i c = 16a i c = 32a fig. 9. dependence of turn-off energy loss on i c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 8 1216 20242832 i c - amperes e o f f - miiiljoules r g = 10 ? v ge = 15v v ce = 400v t j = 125 o c t j = 25 o c fig. 10. dependence of turn-off energy loss on temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 32a r g = 10 ? v ge = 15v v ce = 400v i c = 16a i c = 8a fig. 11. dependence of turn-off sw itching time on r g 100 150 200 250 300 350 400 450 10 20 30 40 50 60 70 80 90 100 r g - ohms s w it c hi ng ti me - nanosecon d s i c = 8a t d(off) t fi - - - - - t j = 125 o c v ge = 15v v ce = 400v i c = 16a i c = 32a fig. 12. dependence of turn-off sw itching time on i c 60 80 100 120 140 160 180 200 220 240 260 8 121620242832 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - r g = 10 ? v ge = 15v v ce = 400v t j = 125 o c t j = 25 o c
fig. 14. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 q g - nanocoulombs v g e - volts v ce = 480v i c = 16a i g = 10ma fig. 15. capacitance 10 100 1,000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 80 100 120 140 160 180 200 220 240 260 280 300 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 32a t d(off) t fi - - - - - r g = 10 ? v ge = 15v v ce = 400v i c = 16a i c = 8a i c = 32a fig. 16. reverse-bias safe operating area 0 3 6 9 12 15 18 21 24 27 30 33 100 200 300 400 500 600 v c e - volts i c - amperes t j = 125 o c r g = 10 ? dv/dt < 10v/ns fig. 17. maxim um transient therm al resistance 0.10 1.00 1 10 100 1,000 pulse width - millisec onds r ( t h ) j c - oc / w 0.50 ixsh 20n60b2d1
ixsh 20n60b2d1 200 600 1000 0 400 800 70 80 90 100 110 120 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 100 1000 0 500 1000 1500 2000 012 0 10 20 30 40 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep 15-06a z thjc i f = 30a i f = 15a i f = 7.5a t vj = 100c v r = 300v t vj = 100c i f = 15a fig. 3. peak reverse current i rm versus -di f /dt fig. 2. reverse recovery charge q r versus -di f /dt fig. 1. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 30a i f = 15a i f = 7.5a q r i rm fig. 4. dynamic parameters q r , i rm versus t vj fig. 5. recovery time t rr versus -di f /dt fig. 6. peak forward voltage v fr and t fr versus di f /dt i f = 30a i f = 15a i f = 7.5a t fr v fr fig. 7 transient thermal resistance junction-to-case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.908 0.0052 2 0.35 0.0003 3 0.342 0.017 t vj =150c t vj =100c t vj = 25c
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